TDM3407 MOSFET Datasheet: P-Ch, 40V, 16.5A. Full specification with pinout and replacement list

TDM3407 Specs and Replacement

Type Designator: TDM3407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 16.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 425 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: SOP8

TDM3407 substitution

- MOSFET ⓘ Cross-Reference Search

TDM3407 datasheet

..1. Size:633K techcode semi
tdm3407.pdf pdf_icon

DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM3407 DESCRIPTION The TDM3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 40V PMOS RDS(ON) ... See More ⇒

8.1. Size:372K techcode semi
tdm3404.pdf pdf_icon

... See More ⇒

8.2. Size:692K techcode semi
tdm3408.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3408 DESCRIPTION The TDM3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

8.3. Size:617K techcode semi
tdm3405.pdf pdf_icon