TDM3412 Specs and Replacement

Type Designator: TDM3412

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm

Package: DFN3X3E-8

TDM3412 substitution

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TDM3412 datasheet

 ..1. Size:865K  techcode semi
tdm3412.pdf pdf_icon

TDM3412

DATASHEET Techcode Dual N-Channel Enhancement Mode MOSFET TDM3412 DESCRIPTION The TDM3412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES Channel 1 RDS(ON) ... See More ⇒

 8.1. Size:558K  techcode semi
tdm3415.pdf pdf_icon

TDM3412

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 9.1. Size:374K  techcode semi
tdm3428b.pdf pdf_icon

TDM3412

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3428B DESCRIPTION The TDM3428B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

 9.2. Size:633K  techcode semi
tdm3407.pdf pdf_icon

TDM3412

DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM3407 DESCRIPTION The TDM3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 40V PMOS RDS(ON) ... See More ⇒

Detailed specifications: TDM31064, TDM31066, TDM3307A, TDM3404, TDM3405, TDM3406, TDM3407, TDM3408, STF13NM60N, TDM3415, TDM3420, TDM3421, TDM3424, TDM3426B, TDM3428B, TDM3430, TDM3432

Keywords - TDM3412 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.