All MOSFET. TDM3426B Datasheet

 

TDM3426B Datasheet and Replacement


   Type Designator: TDM3426B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOT89
 

 TDM3426B substitution

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TDM3426B Datasheet (PDF)

 ..1. Size:353K  techcode semi
 tdm3426b.pdf pdf_icon

TDM3426B

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3426BDESCRIPTIONTheTDM3426BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.1. Size:374K  techcode semi
 tdm3428b.pdf pdf_icon

TDM3426B

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3428BDESCRIPTIONTheTDM3428BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.2. Size:266K  techcode semi
 tdm3424.pdf pdf_icon

TDM3426B

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3424DESCRIPTIONTheTDM3424usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.3. Size:567K  techcode semi
 tdm3421.pdf pdf_icon

TDM3426B

DATASHEETTechcodeP-Channel Enhancement Mode MOSFET TDM3421DESCRIPTIONTheTDM3421usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

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Datasheet: TDM3406 , TDM3407 , TDM3408 , TDM3412 , TDM3415 , TDM3420 , TDM3421 , TDM3424 , K2611 , TDM3428B , TDM3430 , TDM3432 , TDM3434 , TDM3436 , TDM3444 , TDM3452 , TDM3458 .

History: IRFP4227PBF | 2SJ503

Keywords - TDM3426B MOSFET datasheet

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