TDM3426B MOSFET Datasheet: N-Ch, 30V, 18A. Full specification with pinout and replacement list

TDM3426B Specs and Replacement

Type Designator: TDM3426B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOT89

TDM3426B substitution

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TDM3426B datasheet

..1. Size:353K techcode semi
tdm3426b.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3426B DESCRIPTION The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

8.1. Size:374K techcode semi
tdm3428b.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3428B DESCRIPTION The TDM3428B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

8.2. Size:266K techcode semi
tdm3424.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3424 DESCRIPTION The TDM3424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

8.3. Size:567K techcode semi
tdm3421.pdf pdf_icon