TDM3510 MOSFET Datasheet: N-Ch, 40V, 50A. Full specification with pinout and replacement list

TDM3510 Specs and Replacement

Type Designator: TDM3510

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.6 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm

Package: TO252

TDM3510 substitution

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TDM3510 datasheet

..1. Size:217K techcode semi
tdm3510.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3510 DESCRIPTION The TDM3510 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

8.1. Size:373K techcode semi
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9.1. Size:604K techcode semi
tdm3532.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3532 DESCRIPTION The TDM3532 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

9.2. Size:768K techcode semi
tdm3548.pdf pdf_icon

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3548 DESCRIPTION The TDM3548 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒