TDM3736 Specs and Replacement

Type Designator: TDM3736

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 112 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1066 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: PQFN5X6-8

TDM3736 substitution

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TDM3736 datasheet

 ..1. Size:466K  techcode semi
 tdm3736.pdf pdf_icon

TDM3736

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 9.1. Size:469K  techcode semi
 tdm3742.pdf pdf_icon

TDM3736

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3742 DESCRIPTION The TDM3742 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 80V/196A RDS(ON) ... See More ⇒

 9.2. Size:461K  techcode semi
 tdm3744.pdf pdf_icon

TDM3736

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3744 DESCRIPTION The TDM3744 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 80V/196A RDS(ON) ... See More ⇒

 9.3. Size:493K  techcode semi
 tdm3726.pdf pdf_icon

TDM3736

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3726 DESCRIPTION The TDM3726 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) ... See More ⇒

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Detailed specifications: TDM3508, TDM3510, TDM3512, TDM3532, TDM3534, TDM3536, TDM3548, TDM3726, AO4468, TDM3742, TDM3744, TF2300, TF2301, TF2302, TF2305B, TF2306, TF2310

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