TW1504ESG MOSFET. Datasheet pdf. Equivalent
Type Designator: TW1504ESG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
|Id|ⓘ - Maximum Drain Current: 0.67 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 14 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.332 Ohm
Package: SOT523
TW1504ESG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TW1504ESG Datasheet (PDF)
tw1504esg.pdf
TW1504ESG N-Channel Enhancement Mode Power MOSFET Features General Description VDS = 20V, Load / power switching for portable devices ID = 0.67A Battery operated systems RDS(ON) @VGS= 4.5V, TYP 255m Power supply converter circuits RDS(ON) @VGS= 2.5V, TYP 348m RDS(ON) @VGS= 1.8V, TYP 542m Pin Configurations SOT523 Absolute Maximum Rati
stb150nf55t4 stw150nf55.pdf
STB150NF55STP150NF55 - STW150NF55N-channel 55V - 0.005 - 120A - D2PAK/TO-220/TO-247STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB150NF55 55V
stb150nf55 stp150nf55 stw150nf55.pdf
STB150NF55STP150NF55 - STW150NF55N-channel 55V - 0.005 - 120A - D2PAK/TO-220/TO-247STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB150NF55 55V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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