TW1527SI MOSFET. Datasheet pdf. Equivalent
Type Designator: TW1527SI
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 9 nC
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm
Package: SOT23
TW1527SI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TW1527SI Datasheet (PDF)
..1. tw1527si.pdf Size:1159K _cn_twgmc
TW1527SI P-Channel Enhancement Mode Field Effect Transistor Features General Description VDS = -30V, Load Switch ID = -4A PWM RDS(ON) @VGS= -10V, TYP 46m RDS(ON) @VGS= -4.5V, TYP 50m RDS(ON) @VGS= -2.5V, TYP 63m Pin Configurations SOT-23 Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Sou
9.1. tw1525si.pdf Size:940K _cn_twgmc
TW1525SI P-Channel Enhancement Mode Power MOSFET Features General Description VDS = -30V, Power Management in Notebook Computer ID = -4.3A Portable Equipment and Battery Powered Systems RDS(ON) @VGS= -10V, TYP 45m RDS(ON) @VGS= -4.5V, TYP 67m Pin Configurations SOT-23 Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symb
9.2. tw1529sj.pdf Size:736K _cn_twgmc
TW1529SJP-Channel Enhancement Mode Power MOSFET Features General Description VDS = -30V, Load Switch ID = -4A PWM RDS(ON) @VGS= -10V, TYP 46m RDS(ON) @VGS= -4.5V, TYP 50m RDS(ON) @VGS= -2.5V, TYP 63m Pin Configurations SOT23-3L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Source Vol
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .



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