All MOSFET. TWS6602FJ Datasheet

 

TWS6602FJ MOSFET. Datasheet pdf. Equivalent

Type Designator: TWS6602FJ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 58 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 1520 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm

Package: PDFN5X6-8L

TWS6602FJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TWS6602FJ Datasheet (PDF)

..1. tws6602fj.pdf Size:1119K _cn_twgmc

TWS6602FJ
TWS6602FJ

TWS6602FJN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 60V, Notebook AC-in load switch ID = 110A Battery protection charge/discharge RDS(ON) @VGS= 10V, TYP 2.9m RDS(ON) @VGS= 4.5V, TYP 4.1m Pin Configurations PDFN5*6-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Dra

8.1. tws6604fl.pdf Size:982K _cn_twgmc

TWS6602FJ
TWS6602FJ

TWS6604FLN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 65V, load switch ID = 54A power supply RDS(ON) @VGS= 10V, TYP 7m synchronous rectifier RDS(ON) @VGS= 4.5V, TYP 10.5m Pin Configurations PDFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Source Vo

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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