All MOSFET. TWS6602FJ Datasheet

 

TWS6602FJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: TWS6602FJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: PDFN5X6-8L

 TWS6602FJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TWS6602FJ Datasheet (PDF)

 ..1. Size:1119K  cn twgmc
 tws6602fj.pdf

TWS6602FJ TWS6602FJ

TWS6602FJN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 60V, Notebook AC-in load switch ID = 110A Battery protection charge/discharge RDS(ON) @VGS= 10V, TYP 2.9m RDS(ON) @VGS= 4.5V, TYP 4.1m Pin Configurations PDFN5*6-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Dra

 8.1. Size:982K  cn twgmc
 tws6604fl.pdf

TWS6602FJ TWS6602FJ

TWS6604FLN-Channel Enhancement Mode Power MOSFET Features General Description VDS = 65V, load switch ID = 54A power supply RDS(ON) @VGS= 10V, TYP 7m synchronous rectifier RDS(ON) @VGS= 4.5V, TYP 10.5m Pin Configurations PDFN3*3-8L Absolute Maximum Ratings @T =25 unless otherwise noted AParameter Symbol Ratings Unit Drain-Source Vo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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