SL10N65F Datasheet and Replacement. Cross Reference Search

SL10N65F Datasheet (PDF)

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SL10N65FN-CHANNEL MOSFET MAIN CHARACTERISTICS10AID650VVDSS0.94R V =10VDS(ON) GS35nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate

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SL10N10AN-Channel Enhancement Mode Field Effect TransistorProduct SummaryD100 VVDS95 mRDS(ON)@10V,MAXD2S110 AIDD1SDGFEATURESSOT-223 Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Absolute Maximum Ratings (TA=25unless otherwise noted)Symbol Parameter Rating UnitCommon Ra

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SL10N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 10AD R ( at V =10V)DS(ON) GS 35 mohm R ( at V =4.5V) 45 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Power m

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