All MOSFET. SL10N65F Datasheet

 

SL10N65F MOSFET. Datasheet pdf. Equivalent


   Type Designator: SL10N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.94 Ohm
   Package: TO220F

 SL10N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL10N65F Datasheet (PDF)

 ..1. Size:1595K  slkor
 sl10n65f.pdf

SL10N65F SL10N65F

SL10N65FN-CHANNEL MOSFET MAIN CHARACTERISTICS10AID650VVDSS0.94R V =10VDS(ON) GS35nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate

 9.1. Size:904K  slkor
 sl10n10a.pdf

SL10N65F SL10N65F

SL10N10AN-Channel Enhancement Mode Field Effect TransistorProduct SummaryD100 VVDS95 mRDS(ON)@10V,MAXD2S110 AIDD1SDGFEATURESSOT-223 Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Absolute Maximum Ratings (TA=25unless otherwise noted)Symbol Parameter Rating UnitCommon Ra

 9.2. Size:1762K  slkor
 sl10n06a.pdf

SL10N65F SL10N65F

SL10N06AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60V DS I 10AD R ( at V =10V)DS(ON) GS 35 mohm R ( at V =4.5V) 45 mohmDS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Applications DC-DC Converters Power m

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