SL10N65F Specs and Replacement

Type Designator: SL10N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.94 Ohm

Package: TO220F

SL10N65F substitution

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SL10N65F datasheet

 ..1. Size:1595K  slkor
 sl10n65f.pdf pdf_icon

SL10N65F

SL10N65F N-CHANNEL MOSFET MAIN CHARACTERISTICS 10A I D 650V V DSS 0.94 R V =10V DS(ON) GS 35nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate ... See More ⇒

 9.1. Size:904K  slkor
 sl10n10a.pdf pdf_icon

SL10N65F

SL10N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary D 100 V VDS 95 m RDS(ON)@10V,MAX D2 S1 10 A ID D1 S D G FEATURES SOT-223 Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Absolute Maximum Ratings (TA=25 unless otherwise noted) Symbol Parameter Rating Unit Common Ra... See More ⇒

 9.2. Size:1762K  slkor
 sl10n06a.pdf pdf_icon

SL10N65F

SL10N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 10A D R ( at V =10V) DS(ON) GS 35 mohm R ( at V =4.5V) 45 mohm DS(ON) GS General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications DC-DC Converters Power m... See More ⇒

Detailed specifications: TW7408FN, TW7468FL, TWE3139K, TWS1008SQ, TWS6428FJ, TWS6602FJ, TWS6604FL, SL100N08, IRF4905, SL11N65CK, SL11N65C, SL11N65CF, SL11P06D, SL130N04Q, SL13N45F, SL13N50FS, SL150N03Q

Keywords - SL10N65F MOSFET specs

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