SL11P06D Specs and Replacement

Type Designator: SL11P06D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO252

SL11P06D substitution

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SL11P06D datasheet

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SL11P06D

SL11P06D P-Channel Power MOSFET General Features VDS =-60V,ID =-11A RDS(ON) ... See More ⇒

Detailed specifications: TWS6428FJ, TWS6602FJ, TWS6604FL, SL100N08, SL10N65F, SL11N65CK, SL11N65C, SL11N65CF, IRFP260, SL130N04Q, SL13N45F, SL13N50FS, SL150N03Q, SL17N06D, SL17N06DN1, SL19N120A, SL21N65CK

Keywords - SL11P06D MOSFET specs

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