All MOSFET. SL21N65C Datasheet

 

SL21N65C Datasheet and Replacement


   Type Designator: SL21N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

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SL21N65C Datasheet (PDF)

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SL21N65C

SL21N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 180 m DS(ON) MAXNew technology for high voltage device ID 21 A Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Switched mo

Datasheet: SL130N04Q , SL13N45F , SL13N50FS , SL150N03Q , SL17N06D , SL17N06DN1 , SL19N120A , SL21N65CK , IRF1010E , SL21N65CF , SL2300 , SL2301 , SL2301S , SL2302 , SL2302S , SL2304 , SL2305 .

History: AP6N12MI

Keywords - SL21N65C MOSFET datasheet

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