SL21N65C MOSFET. Datasheet pdf. Equivalent
Type Designator: SL21N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 188 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 36 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 83 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220
SL21N65C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL21N65C Datasheet (PDF)
..1. Size:778K slkor
sl21n65c.pdf
sl21n65c.pdf
SL21N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 180 m DS(ON) MAXNew technology for high voltage device ID 21 A Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Switched mo
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
