SL21N65C Datasheet and Replacement
Type Designator: SL21N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 83 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220
SL21N65C substitution
SL21N65C Datasheet (PDF)
sl21n65c.pdf

SL21N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 180 m DS(ON) MAXNew technology for high voltage device ID 21 A Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Switched mo
Datasheet: SL130N04Q , SL13N45F , SL13N50FS , SL150N03Q , SL17N06D , SL17N06DN1 , SL19N120A , SL21N65CK , IRF530 , SL21N65CF , SL2300 , SL2301 , SL2301S , SL2302 , SL2302S , SL2304 , SL2305 .
History: HRP80N08K | PMN40UPEA | RU30E30L | MTP2N50 | SWX170R15ET | NCE30PD08S | IRFU3706
Keywords - SL21N65C MOSFET datasheet
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History: HRP80N08K | PMN40UPEA | RU30E30L | MTP2N50 | SWX170R15ET | NCE30PD08S | IRFU3706



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