SL60N06 Datasheet and Replacement
Type Designator: SL60N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 237 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO220
SL60N06 substitution
SL60N06 Datasheet (PDF)
sl60n06.pdf

SL60N06N-Channel Power MOSFET General Features VDS =60V,ID =60A RDS(ON)
sl60n10q.pdf

SL60N10QN-Channel Power MOSFET General DescriptionProduct Summary Very low on-resistance RDS(ON)VDS 100V Low Gate ChargeID 60A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)
Datasheet: SL3422 , SL3N06 , SL420NPD , SL42N120A , SL48N08Q , SL4N65F , SL4N65I , SL4N65D , NCEP15T14 , SL60N10Q , SL65N10Q , SL75N06Q , SL7N65F , SL7N65C , SL80N10 , SL8205S , 2N06L07B .
History: APT1002RBN | CMLDM7120G | WTN9575
Keywords - SL60N06 MOSFET datasheet
SL60N06 cross reference
SL60N06 equivalent finder
SL60N06 lookup
SL60N06 substitution
SL60N06 replacement
History: APT1002RBN | CMLDM7120G | WTN9575



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