All MOSFET. SL60N06 Datasheet

 

SL60N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: SL60N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 237 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm

Package: TO220

SL60N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SL60N06 Datasheet (PDF)

..1. sl60n06.pdf Size:541K _slkor

SL60N06 SL60N06

SL60N06N-Channel Power MOSFET General Features VDS =60V,ID =60A RDS(ON)

9.1. sl60n10q.pdf Size:1214K _slkor

SL60N06 SL60N06

SL60N10QN-Channel Power MOSFET General DescriptionProduct Summary Very low on-resistance RDS(ON)VDS 100V Low Gate ChargeID 60A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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