SL60N10Q Datasheet. Specs and Replacement

Type Designator: SL60N10Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: DFN5X6

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SL60N10Q datasheet

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SL60N10Q

SL60N10Q N-Channel Power MOSFET General Description Product Summary Very low on-resistance RDS(ON) VDS 100V Low Gate Charge ID 60A Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS =10V) ... See More ⇒

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SL60N10Q

SL60N06 N-Channel Power MOSFET General Features VDS =60V,ID =60A RDS(ON) ... See More ⇒

Detailed specifications: SL3N06, SL420NPD, SL42N120A, SL48N08Q, SL4N65F, SL4N65I, SL4N65D, SL60N06, 7N60, SL65N10Q, SL75N06Q, SL7N65F, SL7N65C, SL80N10, SL8205S, 2N06L07B, 2N06L07P

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