All MOSFET. SL60N10Q Datasheet

 

SL60N10Q Datasheet and Replacement


   Type Designator: SL60N10Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFN5X6
 

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SL60N10Q Datasheet (PDF)

 ..1. Size:1214K  slkor
 sl60n10q.pdf pdf_icon

SL60N10Q

SL60N10QN-Channel Power MOSFET General DescriptionProduct Summary Very low on-resistance RDS(ON)VDS 100V Low Gate ChargeID 60A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)

 9.1. Size:541K  slkor
 sl60n06.pdf pdf_icon

SL60N10Q

SL60N06N-Channel Power MOSFET General Features VDS =60V,ID =60A RDS(ON)

Datasheet: SL3N06 , SL420NPD , SL42N120A , SL48N08Q , SL4N65F , SL4N65I , SL4N65D , SL60N06 , MMIS60R580P , SL65N10Q , SL75N06Q , SL7N65F , SL7N65C , SL80N10 , SL8205S , 2N06L07B , 2N06L07P .

History: SI4622DY | VBZL80N03

Keywords - SL60N10Q MOSFET datasheet

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