SL65N10Q MOSFET. Datasheet pdf. Equivalent
Type Designator: SL65N10Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 326 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: DFN5X6
SL65N10Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SL65N10Q Datasheet (PDF)
..1. sl65n10q.pdf Size:1199K _slkor
SL65N10QN-Channel Power MOSFET General DescriptionProduct Summary Very low on-resistance RDS(ON)VDS 100V Low Gate ChargeID 65A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .



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