All MOSFET. SL65N10Q Datasheet


SL65N10Q MOSFET. Datasheet pdf. Equivalent

Type Designator: SL65N10Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 326 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: DFN5X6

SL65N10Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SL65N10Q Datasheet (PDF)

..1. sl65n10q.pdf Size:1199K _slkor


SL65N10QN-Channel Power MOSFET General DescriptionProduct Summary Very low on-resistance RDS(ON)VDS 100V Low Gate ChargeID 65A Excellent Gate Charge x RDS(ON) ProductRDS(ON) (at VGS =10V)

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , 10N60 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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