All MOSFET. 2SK2819 Datasheet

 

2SK2819 Datasheet and Replacement


   Type Designator: 2SK2819
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 125 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252
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2SK2819 Datasheet (PDF)

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2SK2819

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2SK2819

isc N-Channel MOSFET Transistor 2SK2819FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

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2SK2819

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2SK2819

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ECH8657 | IRF441 | AP9926GEO | RW1C020UN | STD4N62K3 | CS7N60FA9HDY | GSM3050S

Keywords - 2SK2819 MOSFET datasheet

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