8810B Datasheet and Replacement
Type Designator: 8810B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TSSOP-8
8810B substitution
8810B Datasheet (PDF)
8810b.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDTSSOP-8 Plastic-Encapsulate MOSFETS 8810B8810BDual N-Channel MOSFETV(BR)DSS RDS(on)MAX ID TSSOP-8 Max0.015 @ 4.5V20V6.0A0.019 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICAT
elm18810ba.pdf

(common drain)Dual N-channel MOSFET ELM18810BA-SGeneral description Features ELM18810BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)
Datasheet: 6764 , 7240 , 7409 , 7409B , 7410 , 7430 , 7506 , 7788 , MMIS60R580P , 90N03L , S8205B , SIA517 , SLP6N70U , SLF6N70U , TF2015 , TF2301A , TF2302A .
History: IRF3707L | STD35NF3LLT4 | IXTT140N10P | SSF2341E | IRF7477PBF | 2SK2196 | AON6516
Keywords - 8810B MOSFET datasheet
8810B cross reference
8810B equivalent finder
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History: IRF3707L | STD35NF3LLT4 | IXTT140N10P | SSF2341E | IRF7477PBF | 2SK2196 | AON6516



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