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8810B Specs and Replacement

Type Designator: 8810B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TSSOP-8

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8810B datasheet

 ..1. Size:3320K  cn tuofeng
 8810b.pdf pdf_icon

8810B

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD TSSOP-8 Plastic-Encapsulate MOSFETS 8810B 8810B Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID TSSOP-8 Max 0.015 @ 4.5V 20V 6.0A 0.019 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICAT... See More ⇒

 0.1. Size:392K  elm
 elm18810ba.pdf pdf_icon

8810B

(common drain) Dual N-channel MOSFET ELM18810BA-S General description Features ELM18810BA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒

Detailed specifications: 6764, 7240, 7409, 7409B, 7410, 7430, 7506, 7788, 7N60, 90N03L, S8205B, SIA517, SLP6N70U, SLF6N70U, TF2015, TF2301A, TF2302A

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