All MOSFET. 8810B Datasheet

 

8810B Datasheet and Replacement


   Type Designator: 8810B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TSSOP-8
 

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8810B Datasheet (PDF)

 ..1. Size:3320K  cn tuofeng
 8810b.pdf pdf_icon

8810B

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDTSSOP-8 Plastic-Encapsulate MOSFETS 8810B8810BDual N-Channel MOSFETV(BR)DSS RDS(on)MAX ID TSSOP-8 Max0.015 @ 4.5V20V6.0A0.019 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICAT

 0.1. Size:392K  elm
 elm18810ba.pdf pdf_icon

8810B

(common drain)Dual N-channel MOSFET ELM18810BA-SGeneral description Features ELM18810BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

Datasheet: 6764 , 7240 , 7409 , 7409B , 7410 , 7430 , 7506 , 7788 , 7N60 , 90N03L , S8205B , SIA517 , SLP6N70U , SLF6N70U , TF2015 , TF2301A , TF2302A .

History: SWF15N65D | SM7320ESQG

Keywords - 8810B MOSFET datasheet

 8810B cross reference
 8810B equivalent finder
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