SLP6N70U Specs and Replacement
Type Designator: SLP6N70U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO252
SLP6N70U substitution
- MOSFET ⓘ Cross-Reference Search
SLP6N70U datasheet
slp6n70u slf6n70u.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD 700V N-Channel MOSFET SLP6N70U/SLF6N70U SLP6N70U/SLF6N70U General Description Features This Power MOSFET is produced using Maple semi s - 4.8A, 700V, RDS(on) typ = 1.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimi... See More ⇒
Detailed specifications: 7410, 7430, 7506, 7788, 8810B, 90N03L, S8205B, SIA517, IRLB3034, SLF6N70U, TF2015, TF2301A, TF2302A, TF2307, TF2312, TF2317, TF2323
Keywords - SLP6N70U MOSFET specs
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