TF2015 Datasheet and Replacement
Type Designator: TF2015
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT23
TF2015 substitution
TF2015 Datasheet (PDF)
tf2015.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2015TF2015 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.7A30.145 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATUREMARKING Equivalent CircuitTrenchFET Power MOSFETLead free product is acquiredSurface mount package338T wAPPLICATION
Datasheet: 7506 , 7788 , 8810B , 90N03L , S8205B , SIA517 , SLP6N70U , SLF6N70U , 8N60 , TF2301A , TF2302A , TF2307 , TF2312 , TF2317 , TF2323 , TF2333 , TF2341 .
History: FTK2N65P
Keywords - TF2015 MOSFET datasheet
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History: FTK2N65P



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