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TF2015 Specs and Replacement

Type Designator: TF2015

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT23

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TF2015 datasheet

 ..1. Size:659K  cn tuofeng
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TF2015

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2015 TF2015 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.100 @-4.5V -20V -2.7A 3 0.145 @-2.5V 1.GATE 2.SOURCE 3.DRAIN 1 2 General FEATURE MARKING Equivalent Circuit TrenchFET Power MOSFET Lead free product is acquired Surface mount package 338T w APPLICATION ... See More ⇒

Detailed specifications: 7506, 7788, 8810B, 90N03L, S8205B, SIA517, SLP6N70U, SLF6N70U, IRFB7545, TF2301A, TF2302A, TF2307, TF2312, TF2317, TF2323, TF2333, TF2341

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