TF2312 MOSFET. Datasheet pdf. Equivalent
Type Designator: TF2312
Marking Code: AE9TF*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.75 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.85 V
Maximum Drain Current |Id|: 3.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 7.5 nC
Rise Time (tr): 30 nS
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SOT23
TF2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2312 Datasheet (PDF)
tf2312.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2312N-Channel 20-V(D-S) MOSFETTF2312V(BR)DSS RDS(on)MAX IDSOT-230.031@ 4.5V31.GATE20V0.037@ 2.5V 5.0A2.SOURCE3.DRAIN0.047@ 1.8V12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageAE9TF wA
tf2310.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2310N-Channel 60-V(D-S) MOSFETTF2310V(BR)DSS RDS(on)MAX IDSOT-230.090@ 10V360V3.0 A1.GATE0.120@ 4.5 V2.SOURCE3.DRAIN12General Features VDS =60V,ID =3A RDS(ON)
tf2317.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-3L Plastic-Encapsulate MOSFETSTF2317TF2317 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.028@-4.5V30.038@-2.5V -4.5A-20V1.GATE2.SOURCE0.050 @-1.8V3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packagew
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
