TF2312 MOSFET. Datasheet pdf. Equivalent
Type Designator: TF2312
Marking Code: AE9TF*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.85 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.5 nC
Rise Time (tr): 30 nS
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SOT23
TF2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2312 Datasheet (PDF)
tf2312.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2312N-Channel 20-V(D-S) MOSFETTF2312V(BR)DSS RDS(on)MAX IDSOT-230.031@ 4.5V31.GATE20V0.037@ 2.5V 5.0A2.SOURCE3.DRAIN0.047@ 1.8V12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageAE9TF wA
tf2310.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2310N-Channel 60-V(D-S) MOSFETTF2310V(BR)DSS RDS(on)MAX IDSOT-230.090@ 10V360V3.0 A1.GATE0.120@ 4.5 V2.SOURCE3.DRAIN12General Features VDS =60V,ID =3A RDS(ON)
tf2317.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-3L Plastic-Encapsulate MOSFETSTF2317TF2317 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-23-3L0.028@-4.5V30.038@-2.5V -4.5A-20V1.GATE2.SOURCE0.050 @-1.8V3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packagew
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
