TF2312 Spec and Replacement
Type Designator: TF2312
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT23
TF2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2312 Specs
tf2312.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2312 N-Channel 20-V(D-S) MOSFET TF2312 V(BR)DSS RDS(on)MAX ID SOT-23 0.031 @ 4.5V 3 1.GATE 20V 0.037 @ 2.5V 5.0A 2.SOURCE 3.DRAIN 0.047 @ 1.8V 1 2 General FEATURE TrenchFET Power MOSFET Equivalent Circuit MARKING Lead free product is acquired Surface mount package AE9TF w A... See More ⇒
tf2310.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2310 N-Channel 60-V(D-S) MOSFET TF2310 V(BR)DSS RDS(on)MAX ID SOT-23 0.090 @ 10V 3 60V 3.0 A 1.GATE 0.120 @ 4.5 V 2.SOURCE 3.DRAIN 1 2 General Features VDS =60V,ID =3A RDS(ON) ... See More ⇒
tf2317.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2317 TF2317 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.028 @-4.5V 3 0.038 @-2.5V -4.5A -20V 1.GATE 2.SOURCE 0.050 @-1.8V 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package w ... See More ⇒
Detailed specifications: S8205B , SIA517 , SLP6N70U , SLF6N70U , TF2015 , TF2301A , TF2302A , TF2307 , RU7088R , TF2317 , TF2323 , TF2333 , TF2341 , TF2369 , TF3404 , TF3410 , TF3420 .
History: STP4N100XI
Keywords - TF2312 MOSFET specs
TF2312 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STP4N100XI
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