TF2312 Datasheet. Specs and Replacement

Type Designator: TF2312  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: SOT23

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TF2312 datasheet

 ..1. Size:1104K  cn tuofeng
 tf2312.pdf pdf_icon

TF2312

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2312 N-Channel 20-V(D-S) MOSFET TF2312 V(BR)DSS RDS(on)MAX ID SOT-23 0.031 @ 4.5V 3 1.GATE 20V 0.037 @ 2.5V 5.0A 2.SOURCE 3.DRAIN 0.047 @ 1.8V 1 2 General FEATURE TrenchFET Power MOSFET Equivalent Circuit MARKING Lead free product is acquired Surface mount package AE9TF w A... See More ⇒

 9.1. Size:3261K  cn tuofeng
 tf2310.pdf pdf_icon

TF2312

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF2310 N-Channel 60-V(D-S) MOSFET TF2310 V(BR)DSS RDS(on)MAX ID SOT-23 0.090 @ 10V 3 60V 3.0 A 1.GATE 0.120 @ 4.5 V 2.SOURCE 3.DRAIN 1 2 General Features VDS =60V,ID =3A RDS(ON) ... See More ⇒

 9.2. Size:2849K  cn tuofeng
 tf2317.pdf pdf_icon

TF2312

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate MOSFETS TF2317 TF2317 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3L 0.028 @-4.5V 3 0.038 @-2.5V -4.5A -20V 1.GATE 2.SOURCE 0.050 @-1.8V 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit Lead free product is acquired Surface mount package w ... See More ⇒

Detailed specifications: S8205B, SIA517, SLP6N70U, SLF6N70U, TF2015, TF2301A, TF2302A, TF2307, RU7088R, TF2317, TF2323, TF2333, TF2341, TF2369, TF3404, TF3410, TF3420

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.