TF2369 MOSFET. Datasheet pdf. Equivalent
Type Designator: TF2369
Marking Code: H96TF*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SOT23
TF2369 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2369 Datasheet (PDF)
tf2369.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-3LPlastic-Encapsulate MOSFETSTF2369TF2369 P-Channel 30-V(D-S) MOSFETPRODUCT SUMMARY SOT-23-3LVDS (V) RDS(on) () Max.ID (A)0.029 at VGS = - 10 V - 5.430.034 at VGS = - 6 V - 30 - 5.01.GATE0.040 at VGS = - 4.5 V - 4.62.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product i
2stf2360.pdf
2STF2360Low voltage fast-switching PNP power transistorsDatasheet - production dataApplications4 Emergency lighting32 LED1 Voltage regulation Relay drive SOT-89DescriptionFigure 1. Internal schematic diagramThe device is PNP transistor manufactured using new PB-HDC (power bipolar high density current) technology. The resulting transistor sho
2std2360 2stf2360 2stn2360.pdf
2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
