TF2369 Spec and Replacement
Type Designator: TF2369
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SOT23
TF2369 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TF2369 Specs
tf2369.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3LPlastic-Encapsulate MOSFETS TF2369 TF2369 P-Channel 30-V(D-S) MOSFET PRODUCT SUMMARY SOT-23-3L VDS (V) RDS(on) ( ) Max. ID (A) 0.029 at VGS = - 10 V - 5.4 3 0.034 at VGS = - 6 V - 30 - 5.0 1.GATE 0.040 at VGS = - 4.5 V - 4.6 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product i... See More ⇒
2stf2360.pdf
2STF2360 Low voltage fast-switching PNP power transistors Datasheet - production data Applications 4 Emergency lighting 3 2 LED 1 Voltage regulation Relay drive SOT-89 Description Figure 1. Internal schematic diagram The device is PNP transistor manufactured using new PB-HDC (power bipolar high density current) technology. The resulting transistor sho... See More ⇒
2std2360 2stf2360 2stn2360.pdf
2STD2360 2STF2360 - 2STN2360 Low voltage fast-switching PNP power transistors Features 4 Very low collector-emitter saturation voltage 4 High current gain characteristic 3 3 2 2 Fast-switching speed 1 1 SOT-223 SOT-89 Applications TAB Emergency lighting LED 3 Voltage regulation 1 Relay drive TO-252 (DPAK) Description Figure 1. Internal schem... See More ⇒
Detailed specifications: TF2301A , TF2302A , TF2307 , TF2312 , TF2317 , TF2323 , TF2333 , TF2341 , IRFP064N , TF3404 , TF3410 , TF3420 , TF68N75 , TF68N80 , RFM04U6P , SSM3J351R , SSM3J356R .
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Keywords - TF2369 MOSFET specs
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History: UTC7N65L
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