All MOSFET. TF2369 Datasheet

 

TF2369 Datasheet and Replacement


   Type Designator: TF2369
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOT23
 

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TF2369 Datasheet (PDF)

 ..1. Size:1363K  cn tuofeng
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TF2369

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-3LPlastic-Encapsulate MOSFETSTF2369TF2369 P-Channel 30-V(D-S) MOSFETPRODUCT SUMMARY SOT-23-3LVDS (V) RDS(on) () Max.ID (A)0.029 at VGS = - 10 V - 5.430.034 at VGS = - 6 V - 30 - 5.01.GATE0.040 at VGS = - 4.5 V - 4.62.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product i

 9.1. Size:193K  st
2stf2360.pdf pdf_icon

TF2369

2STF2360Low voltage fast-switching PNP power transistorsDatasheet - production dataApplications4 Emergency lighting32 LED1 Voltage regulation Relay drive SOT-89DescriptionFigure 1. Internal schematic diagramThe device is PNP transistor manufactured using new PB-HDC (power bipolar high density current) technology. The resulting transistor sho

 9.2. Size:283K  st
2std2360 2stf2360 2stn2360.pdf pdf_icon

TF2369

2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem

Datasheet: TF2301A , TF2302A , TF2307 , TF2312 , TF2317 , TF2323 , TF2333 , TF2341 , 5N50 , TF3404 , TF3410 , TF3420 , TF68N75 , TF68N80 , RFM04U6P , SSM3J351R , SSM3J356R .

History: IPB65R065C7 | NX7002BK | RU1H130Q | 2SK1477 | AP70SL380AH | AP4500GM | AM4990NE

Keywords - TF2369 MOSFET datasheet

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