All MOSFET. TF68N80 Datasheet

 

TF68N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TF68N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263 TO220H

 TF68N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TF68N80 Datasheet (PDF)

 ..1. Size:1325K  cn tuofeng
 tf68n80.pdf

TF68N80 TF68N80

Shenzhen Tuofeng Semiconductor Technology Co., LtdTF68N80POWER MOSFET Features 68V,80A N-Channel MOSFET RDS(on)(typ.)=6.5m@VGS=10V GG High ruggedness GDD Fast switching TO-263S STO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application Absolute Maximum Ratings Symbol Parameter Value Units

 9.1. Size:4008K  cn tuofeng
 tf68n75.pdf

TF68N80 TF68N80

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN -CHANNEL ENHANCEMENT MODE POWER MOSFETTF68N75POWER MOSFET Features 68V,75A N-Channel MOSFET RDS(on)(typ.)=6.5m@VGS=10V GGD High ruggedness GD Fast switching TO-263S STO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application GDSTO-220

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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