TF68N80 Datasheet. Specs and Replacement
Type Designator: TF68N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263 TO220H
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TF68N80 substitution
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TF68N80 datasheet
tf68n80.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF68N80 POWER MOSFET Features 68V,80A N-Channel MOSFET RDS(on)(typ.)=6.5m @VGS=10V G G High ruggedness G D D Fast switching TO-263 S S TO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application Absolute Maximum Ratings Symbol Parameter Value Units ... See More ⇒
tf68n75.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF68N75 POWER MOSFET Features 68V,75A N-Channel MOSFET RDS(on)(typ.)=6.5m @VGS=10V G G D High ruggedness G D Fast switching TO-263 S S TO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application G D S TO-220 ... See More ⇒
Detailed specifications: TF2323, TF2333, TF2341, TF2369, TF3404, TF3410, TF3420, TF68N75, IRF740, RFM04U6P, SSM3J351R, SSM3J356R, SSM3J358R, SSM3J56ACT, SSM3K344R, SSM3K345R, SSM3K35AMFV
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