RFM04U6P Datasheet. Specs and Replacement

Type Designator: RFM04U6P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: SC62

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RFM04U6P datasheet

 ..1. Size:213K  toshiba
 rfm04u6p.pdf pdf_icon

RFM04U6P

RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in thi... See More ⇒

 9.1. Size:189K  international rectifier
 irfm044.pdf pdf_icon

RFM04U6P

PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET ... See More ⇒

Detailed specifications: TF2333, TF2341, TF2369, TF3404, TF3410, TF3420, TF68N75, TF68N80, IRF840, SSM3J351R, SSM3J356R, SSM3J358R, SSM3J56ACT, SSM3K344R, SSM3K345R, SSM3K35AMFV, SSM3K361R

Keywords - RFM04U6P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.