All MOSFET. RFM04U6P Datasheet

 

RFM04U6P Datasheet and Replacement


   Type Designator: RFM04U6P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SC62
 

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RFM04U6P Datasheet (PDF)

 ..1. Size:213K  toshiba
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RFM04U6P

RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in thi

 9.1. Size:189K  international rectifier
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RFM04U6P

PD - 90708BIRFM044POWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM044 0.04 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-sistance combined with high transconductance. HEXFET

Datasheet: TF2333 , TF2341 , TF2369 , TF3404 , TF3410 , TF3420 , TF68N75 , TF68N80 , IRF840 , SSM3J351R , SSM3J356R , SSM3J358R , SSM3J56ACT , SSM3K344R , SSM3K345R , SSM3K35AMFV , SSM3K361R .

History: AM1561CE | APTC60DDAM70CT1G

Keywords - RFM04U6P MOSFET datasheet

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