RFM04U6P Spec and Replacement
Type Designator: RFM04U6P
Marking Code: W*F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SC62
RFM04U6P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFM04U6P Specs
rfm04u6p.pdf
RFM04U6P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM04U6P VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in thi... See More ⇒
irfm044.pdf
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET ... See More ⇒
Detailed specifications: TF2333 , TF2341 , TF2369 , TF3404 , TF3410 , TF3420 , TF68N75 , TF68N80 , IRF840 , SSM3J351R , SSM3J356R , SSM3J358R , SSM3J56ACT , SSM3K344R , SSM3K345R , SSM3K35AMFV , SSM3K361R .
History: HM85N80
Keywords - RFM04U6P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
