TK750A60F Specs and Replacement
Type Designator: TK750A60F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
TK750A60F substitution
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TK750A60F datasheet
tk750a60f.pdf
TK750A60F MOSFETs Silicon N-Channel MOS ( -MOS ) TK750A60F TK750A60F TK750A60F TK750A60F 1. Applications 1. Applications 1. Applications 1. Applications Switching Power Supplies 2. Features 2. Features 2. Features 2. Features (1) Easy to control Gate switching (2) Low drain-source on-resistance RDS(ON) = 0.62 (typ.) (3) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ... See More ⇒
ftk7509.pdf
SEMICONDUCTOR FTK7509 TECHNICAL DATA Feathers ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK7509 is a new generation of middle voltage and hig... See More ⇒
Detailed specifications: SSM3K7002CFU, SSM3K72KFS, SSM6J511NU, T2N7002AK, T2N7002BK, TK290P65Y, TK380P60Y, TK380P65Y, IRFB4115, TPCA8123, TPH1500CNH, TPH1R306PL, TPH1R403NL, TPH1R712MD, TPH2900ENH, TPH2R608NH, TPH3R506PL
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