TK750A60F Datasheet and Replacement
Type Designator: TK750A60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
TK750A60F substitution
TK750A60F Datasheet (PDF)
tk750a60f.pdf

TK750A60FMOSFETs Silicon N-Channel MOS (-MOS)TK750A60FTK750A60FTK750A60FTK750A60F1. Applications1. Applications1. Applications1. Applications Switching Power Supplies2. Features2. Features2. Features2. Features(1) Easy to control Gate switching(2) Low drain-source on-resistance: RDS(ON) = 0.62 (typ.)(3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V,
ftk7509.pdf

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig
Datasheet: SSM3K7002CFU , SSM3K72KFS , SSM6J511NU , T2N7002AK , T2N7002BK , TK290P65Y , TK380P60Y , TK380P65Y , IRFP250N , TPCA8123 , TPH1500CNH , TPH1R306PL , TPH1R403NL , TPH1R712MD , TPH2900ENH , TPH2R608NH , TPH3R506PL .
History: HYG065N07NS1P | STB75N20
Keywords - TK750A60F MOSFET datasheet
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History: HYG065N07NS1P | STB75N20



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