All MOSFET. TK750A60F Datasheet

 

TK750A60F Datasheet and Replacement


   Type Designator: TK750A60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
 

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TK750A60F Datasheet (PDF)

 ..1. Size:459K  toshiba
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TK750A60F

TK750A60FMOSFETs Silicon N-Channel MOS (-MOS)TK750A60FTK750A60FTK750A60FTK750A60F1. Applications1. Applications1. Applications1. Applications Switching Power Supplies2. Features2. Features2. Features2. Features(1) Easy to control Gate switching(2) Low drain-source on-resistance: RDS(ON) = 0.62 (typ.)(3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V,

 9.1. Size:566K  first silicon
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TK750A60F

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig

Datasheet: SSM3K7002CFU , SSM3K72KFS , SSM6J511NU , T2N7002AK , T2N7002BK , TK290P65Y , TK380P60Y , TK380P65Y , IRFP250N , TPCA8123 , TPH1500CNH , TPH1R306PL , TPH1R403NL , TPH1R712MD , TPH2900ENH , TPH2R608NH , TPH3R506PL .

History: HYG065N07NS1P | STB75N20

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