TPH2900ENH Specs and Replacement
Type Designator: TPH2900ENH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SOP8
TPH2900ENH substitution
- MOSFET ⓘ Cross-Reference Search
TPH2900ENH datasheet
tph2900enh.pdf
TPH2900ENH MOSFETs Silicon N-channel MOS (U-MOS -H) TPH2900ENH TPH2900ENH TPH2900ENH TPH2900ENH 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 8.2 nC (typ.) (3) Low drain-source on-resista... See More ⇒
Detailed specifications: TK380P60Y, TK380P65Y, TK750A60F, TPCA8123, TPH1500CNH, TPH1R306PL, TPH1R403NL, TPH1R712MD, IRF630, TPH2R608NH, TPH3R506PL, TPH3R704PL, TPH3R70APL, TPH4R008NH, TPH4R10ANL, TPH8R008NH, TPHR6503PL
Keywords - TPH2900ENH MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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