All MOSFET. TPH2900ENH Datasheet

 

TPH2900ENH Datasheet and Replacement


   Type Designator: TPH2900ENH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SOP8
 

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TPH2900ENH Datasheet (PDF)

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TPH2900ENH

TPH2900ENHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH2900ENHTPH2900ENHTPH2900ENHTPH2900ENH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 8.2 nC (typ.)(3) Low drain-source on-resista

Datasheet: TK380P60Y , TK380P65Y , TK750A60F , TPCA8123 , TPH1500CNH , TPH1R306PL , TPH1R403NL , TPH1R712MD , 7N65 , TPH2R608NH , TPH3R506PL , TPH3R704PL , TPH3R70APL , TPH4R008NH , TPH4R10ANL , TPH8R008NH , TPHR6503PL .

History: IPI100N08N3G

Keywords - TPH2900ENH MOSFET datasheet

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