All MOSFET. TPH2R608NH Datasheet

 

TPH2R608NH MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPH2R608NH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SOP8

 TPH2R608NH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPH2R608NH Datasheet (PDF)

 ..1. Size:235K  toshiba
 tph2r608nh.pdf

TPH2R608NH TPH2R608NH

TPH2R608NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH2R608NHTPH2R608NHTPH2R608NHTPH2R608NH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 28 nC (typ.)(3) Low drain-source on-resistan

 9.1. Size:235K  toshiba
 tph2r306nh.pdf

TPH2R608NH TPH2R608NH

TPH2R306NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH2R306NHTPH2R306NHTPH2R306NHTPH2R306NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 26 nC (typ.)(3) Low drain-source on-resis

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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