TPHR6503PL MOSFET. Datasheet pdf. Equivalent
Type Designator: TPHR6503PL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 2720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00065 Ohm
Package: SOP8
TPHR6503PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPHR6503PL Datasheet (PDF)
tphr6503pl.pdf
TPHR6503PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPHR6503PLTPHR6503PLTPHR6503PLTPHR6503PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 30 nC (typ.)(3) Small output charge: Qoss =
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