TPN11006NL MOSFET. Datasheet pdf. Equivalent
Type Designator: TPN11006NL
Marking Code: 11006NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 37 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0114 Ohm
Package: TSON8
TPN11006NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPN11006NL Datasheet (PDF)
tpn11006nl.pdf
TPN11006NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN11006NLTPN11006NLTPN11006NLTPN11006NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 6.4 nC (typ.)(3) Low drain-source on-resi
tpn11003nl.pdf
TPN11003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN11003NLTPN11003NLTPN11003NLTPN11003NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 1
tpn1110enh.pdf
TPN1110ENHMOSFETs Silicon N-channel MOS (U-MOS-H)TPN1110ENHTPN1110ENHTPN1110ENHTPN1110ENH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.6 nC (typ.)(3) Low drain-source on-resista
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
