All MOSFET. TPW4R50ANH Datasheet

 

TPW4R50ANH Datasheet and Replacement


   Type Designator: TPW4R50ANH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 92 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DSOP8
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TPW4R50ANH Datasheet (PDF)

 ..1. Size:777K  toshiba
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TPW4R50ANH

TPW4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPW4R50ANHTPW4R50ANHTPW4R50ANHTPW4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 22 nC (typ.)(3) Low drain-source on-resis

 9.1. Size:774K  toshiba
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TPW4R50ANH

TPW4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPW4R008NHTPW4R008NHTPW4R008NHTPW4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 18 nC (typ.)(3) Low drain-source on-resis

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6683GYT-HF | LKK47-06C5 | TSM4424CS | AP85T03GP-HF | FDN302P | IRFB3004GPBF | BRCS200P03DP

Keywords - TPW4R50ANH MOSFET datasheet

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