TPW4R50ANH MOSFET. Datasheet pdf. Equivalent
Type Designator: TPW4R50ANH
Marking Code: KA1*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 92 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 9.6 nS
Cossⓘ - Output Capacitance: 700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: DSOP8
TPW4R50ANH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPW4R50ANH Datasheet (PDF)
tpw4r50anh.pdf
TPW4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPW4R50ANHTPW4R50ANHTPW4R50ANHTPW4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 22 nC (typ.)(3) Low drain-source on-resis
tpw4r008nh.pdf
TPW4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPW4R008NHTPW4R008NHTPW4R008NHTPW4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 18 nC (typ.)(3) Low drain-source on-resis
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
