All MOSFET. TPW4R50ANH Datasheet

 

TPW4R50ANH Datasheet and Replacement


   Type Designator: TPW4R50ANH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DSOP8
 

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TPW4R50ANH Datasheet (PDF)

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TPW4R50ANH

TPW4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPW4R50ANHTPW4R50ANHTPW4R50ANHTPW4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 22 nC (typ.)(3) Low drain-source on-resis

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TPW4R50ANH

TPW4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPW4R008NHTPW4R008NHTPW4R008NHTPW4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 18 nC (typ.)(3) Low drain-source on-resis

Datasheet: TPHR6503PL , TPHR9003NL , TPN11003NL , TPN11006NL , TPN1R603PL , TPN2R203NC , TPN3R704PL , TPN6R303NC , TK10A60D , TPWR8503NL , WSC15N10 , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , WSD14N10DNG .

History: SI7N65F

Keywords - TPW4R50ANH MOSFET datasheet

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