All MOSFET. TPWR8503NL Datasheet

 

TPWR8503NL Datasheet and Replacement


   Type Designator: TPWR8503NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 2700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
   Package: DSOP8
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TPWR8503NL Datasheet (PDF)

 ..1. Size:460K  toshiba
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TPWR8503NL

TPWR8503NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPWR8503NLTPWR8503NLTPWR8503NLTPWR8503NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 16 nC (typ.)(3) Low drain-source on-resistan

 9.1. Size:497K  toshiba
 tpwr8004pl.pdf pdf_icon

TPWR8503NL

TPWR8004PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPWR8004PLTPWR8004PLTPWR8004PLTPWR8004PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 23 nC (typ.)(3) Small output charge: Qoss =

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History: WMM11N80M3 | AON7240 | IRFI7536G | FDMS9620S | HGS120N10SL

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