All MOSFET. TPWR8503NL Datasheet

 

TPWR8503NL Datasheet and Replacement


   Type Designator: TPWR8503NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 2700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
   Package: DSOP8
 
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TPWR8503NL Datasheet (PDF)

 ..1. Size:460K  toshiba
 tpwr8503nl.pdf pdf_icon

TPWR8503NL

TPWR8503NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPWR8503NLTPWR8503NLTPWR8503NLTPWR8503NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 16 nC (typ.)(3) Low drain-source on-resistan

 9.1. Size:497K  toshiba
 tpwr8004pl.pdf pdf_icon

TPWR8503NL

TPWR8004PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPWR8004PLTPWR8004PLTPWR8004PLTPWR8004PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 23 nC (typ.)(3) Small output charge: Qoss =

Datasheet: TPHR9003NL , TPN11003NL , TPN11006NL , TPN1R603PL , TPN2R203NC , TPN3R704PL , TPN6R303NC , TPW4R50ANH , RFP50N06 , WSC15N10 , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , WSD14N10DNG , WSD1614DN .

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