WSC40N06 Datasheet and Replacement
Type Designator: WSC40N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 28 nC
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO251
WSC40N06 substitution
WSC40N06 Datasheet (PDF)
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wsc40n06.pdf
wsc40n06.pdf
WSC40N06 N-Ch MOSFETGeneral Description Product SummeryThe WSC40N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 20m 50Agate charge for most of the synchronous buck converter applications . Applications The WSC40N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous
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