WSC5N20A Datasheet and Replacement
Type Designator: WSC5N20A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 53 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251
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WSC5N20A Datasheet (PDF)
wsc5n20a.pdf

WSC5N20AN-Ch MOSFETGeneral Description Product SummeryThe WSC5N20A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 200V 5A0.6and gate charge for most of the synchronous buck converter applications . Applications The WSC5N20A meet the RoHS and Green Product requirement , 100% EAS Telecom
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SVF18N65F | IPI47N10S-33 | 14N65 | RU6H2L | IRFZ48RS | 9N90 | WSD30L30DN
Keywords - WSC5N20A MOSFET datasheet
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History: SVF18N65F | IPI47N10S-33 | 14N65 | RU6H2L | IRFZ48RS | 9N90 | WSD30L30DN



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