All MOSFET. WSC5N20A Datasheet

 

WSC5N20A Datasheet and Replacement


   Type Designator: WSC5N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251
 

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WSC5N20A Datasheet (PDF)

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WSC5N20A

WSC5N20AN-Ch MOSFETGeneral Description Product SummeryThe WSC5N20A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 200V 5A0.6and gate charge for most of the synchronous buck converter applications . Applications The WSC5N20A meet the RoHS and Green Product requirement , 100% EAS Telecom

Datasheet: TPN1R603PL , TPN2R203NC , TPN3R704PL , TPN6R303NC , TPW4R50ANH , TPWR8503NL , WSC15N10 , WSC40N06 , TK10A60D , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , WSD14N10DNG , WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 .

History: WPMD2010 | SM1F14NSKP

Keywords - WSC5N20A MOSFET datasheet

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