WSC5N20A PDF and Equivalents Search

 

WSC5N20A Specs and Replacement

Type Designator: WSC5N20A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251

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WSC5N20A datasheet

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WSC5N20A

WSC5N20A N-Ch MOSFET General Description Product Summery The WSC5N20A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 200V 5A 0.6 and gate charge for most of the synchronous buck converter applications . Applications The WSC5N20A meet the RoHS and Green Product requirement , 100% EAS Telecom ... See More ⇒

Detailed specifications: TPN1R603PL, TPN2R203NC, TPN3R704PL, TPN6R303NC, TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, IRF1010E, WSC60N03, WSD100N06GDN56, WSD1216DN22, WSD14N10DNG, WSD1614DN, WSD2012DN25, WSD2018ADN22, WSD2018BDN22

Keywords - WSC5N20A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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