WSC60N03 PDF and Equivalents Search

 

WSC60N03 Specs and Replacement

Type Designator: WSC60N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO251

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WSC60N03 datasheet

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WSC60N03

WSC60N03 N-Ch MOSFET General Description Product Summery The WSC60N03 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 4.1m 60A gate charge for most of the synchronous buck converter applications . Applications The WSC60N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒

Detailed specifications: TPN2R203NC, TPN3R704PL, TPN6R303NC, TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, IRFB3607, WSD100N06GDN56, WSD1216DN22, WSD14N10DNG, WSD1614DN, WSD2012DN25, WSD2018ADN22, WSD2018BDN22, WSD2018DN22

Keywords - WSC60N03 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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