All MOSFET. WSC60N03 Datasheet

 

WSC60N03 Datasheet and Replacement


   Type Designator: WSC60N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO251
 

 WSC60N03 substitution

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WSC60N03 Datasheet (PDF)

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WSC60N03

WSC60N03N-Ch MOSFETGeneral Description Product SummeryThe WSC60N03 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 4.1m 60Agate charge for most of the synchronous buck converter applications . Applications The WSC60N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: TPN2R203NC , TPN3R704PL , TPN6R303NC , TPW4R50ANH , TPWR8503NL , WSC15N10 , WSC40N06 , WSC5N20A , IRFB3607 , WSD100N06GDN56 , WSD1216DN22 , WSD14N10DNG , WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 .

History: 30P06 | SIR403EDP | STT3922N | 2SK544 | WMO90P04TS | STT3599C | AOW290

Keywords - WSC60N03 MOSFET datasheet

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