All MOSFET. WSD100N06GDN56 Datasheet

 

WSD100N06GDN56 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD100N06GDN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1522 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6A-8-EP

 WSD100N06GDN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD100N06GDN56 Datasheet (PDF)

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 wsd100n06gdn56.pdf

WSD100N06GDN56 WSD100N06GDN56

WSD100N06GDN56 N-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON IDThe WSD100N06GDN56 is the SGT MOSFET with extreme high cell density,which provide 60V 100A3.0mexcellent RDSON and gate charge for most of the synchronous buck converter applications .Applications Secondary Side Synchronous RectificationThe WSD100N06GDN56 meet the RoHS and Green Product requi

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