WSD100N06GDN56 Specs and Replacement
Type Designator: WSD100N06GDN56
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1522 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: DFN5X6A-8-EP
WSD100N06GDN56 substitution
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WSD100N06GDN56 datasheet
wsd100n06gdn56.pdf
WSD100N06GDN56 N-Ch MOSFET General Description Product Summery BVDSS RDSON ID The WSD100N06GDN56 is the SGT MOSFET with extreme high cell density,which provide 60V 100A 3.0m excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications Secondary Side Synchronous Rectification The WSD100N06GDN56 meet the RoHS and Green Product requi... See More ⇒
Detailed specifications: TPN3R704PL, TPN6R303NC, TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, WSC60N03, AON6380, WSD1216DN22, WSD14N10DNG, WSD1614DN, WSD2012DN25, WSD2018ADN22, WSD2018BDN22, WSD2018DN22, WSD2050DN
Keywords - WSD100N06GDN56 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SRT15N750LD56
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