All MOSFET. WSD100N06GDN56 Datasheet

 

WSD100N06GDN56 Datasheet and Replacement


   Type Designator: WSD100N06GDN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1522 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6A-8-EP
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WSD100N06GDN56 Datasheet (PDF)

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WSD100N06GDN56

WSD100N06GDN56 N-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON IDThe WSD100N06GDN56 is the SGT MOSFET with extreme high cell density,which provide 60V 100A3.0mexcellent RDSON and gate charge for most of the synchronous buck converter applications .Applications Secondary Side Synchronous RectificationThe WSD100N06GDN56 meet the RoHS and Green Product requi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TMPF16N60 | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | HM70N78 | STD4N62K3

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