All MOSFET. WSD14N10DNG Datasheet

 

WSD14N10DNG Datasheet and Replacement


   Type Designator: WSD14N10DNG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.3 nC
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 28.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: DFN3X3-8L
 

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WSD14N10DNG Datasheet (PDF)

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WSD14N10DNG

WSD14N10DNG N-Ch MOSFETGeneral Description Product SummeryThe WSD14N10DNG is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 100V 140m 14Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD14N10DNG meet the RoHS and Green Battery protection Product r

Datasheet: TPW4R50ANH , TPWR8503NL , WSC15N10 , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , IRLB4132 , WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 , WSD2050DN , WSD2054DN22 , WSD2068 .

History: SWH160R02VT | RU6051H | SRT10N047HC56TR-G

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