WSD14N10DNG PDF and Equivalents Search

 

WSD14N10DNG Specs and Replacement

Type Designator: WSD14N10DNG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 28.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: DFN3X3-8L

WSD14N10DNG substitution

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WSD14N10DNG datasheet

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WSD14N10DNG

WSD14N10DNG N-Ch MOSFET General Description Product Summery The WSD14N10DNG is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 100V 140m 14A excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD14N10DNG meet the RoHS and Green Battery protection Product r... See More ⇒

Detailed specifications: TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, WSC60N03, WSD100N06GDN56, WSD1216DN22, CS150N03A8, WSD1614DN, WSD2012DN25, WSD2018ADN22, WSD2018BDN22, WSD2018DN22, WSD2050DN, WSD2054DN22, WSD2068

Keywords - WSD14N10DNG MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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