WSD14N10DNG Specs and Replacement
Type Designator: WSD14N10DNG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 28.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: DFN3X3-8L
WSD14N10DNG substitution
- MOSFET ⓘ Cross-Reference Search
WSD14N10DNG datasheet
wsd14n10dng.pdf
WSD14N10DNG N-Ch MOSFET General Description Product Summery The WSD14N10DNG is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 100V 140m 14A excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD14N10DNG meet the RoHS and Green Battery protection Product r... See More ⇒
Detailed specifications: TPW4R50ANH, TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, WSC60N03, WSD100N06GDN56, WSD1216DN22, CS150N03A8, WSD1614DN, WSD2012DN25, WSD2018ADN22, WSD2018BDN22, WSD2018DN22, WSD2050DN, WSD2054DN22, WSD2068
Keywords - WSD14N10DNG MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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