All MOSFET. WSD14N10DNG Datasheet

 

WSD14N10DNG MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD14N10DNG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 28.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: DFN3X3-8L

 WSD14N10DNG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD14N10DNG Datasheet (PDF)

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 wsd14n10dng.pdf

WSD14N10DNG WSD14N10DNG

WSD14N10DNG N-Ch MOSFETGeneral Description Product SummeryThe WSD14N10DNG is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 100V 140m 14Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD14N10DNG meet the RoHS and Green Battery protection Product r

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