WSD14N10DNG Datasheet and Replacement
Type Designator: WSD14N10DNG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 28.9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: DFN3X3-8L
WSD14N10DNG substitution
WSD14N10DNG Datasheet (PDF)
wsd14n10dng.pdf

WSD14N10DNG N-Ch MOSFETGeneral Description Product SummeryThe WSD14N10DNG is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 100V 140m 14Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD14N10DNG meet the RoHS and Green Battery protection Product r
Datasheet: TPW4R50ANH , TPWR8503NL , WSC15N10 , WSC40N06 , WSC5N20A , WSC60N03 , WSD100N06GDN56 , WSD1216DN22 , IRLB4132 , WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 , WSD2050DN , WSD2054DN22 , WSD2068 .
History: NCE3080KA
Keywords - WSD14N10DNG MOSFET datasheet
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History: NCE3080KA



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