WSD1614DN PDF and Equivalents Search

 

WSD1614DN Specs and Replacement

Type Designator: WSD1614DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: DFN1.0X0.6-3L

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WSD1614DN datasheet

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WSD1614DN

WSD1614DN N-Ch MOSFET Description Product Summery The WSD1614DN uses advanced trench technology BVDSS RDSON ID to provide excellent RDS(ON), low gate charge 20V 230m 1.4A and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery Application protection or in other Switching application. Battery protection Load switch Features DFN1.0X0.6-3L P... See More ⇒

Detailed specifications: TPWR8503NL, WSC15N10, WSC40N06, WSC5N20A, WSC60N03, WSD100N06GDN56, WSD1216DN22, WSD14N10DNG, NCEP15T14, WSD2012DN25, WSD2018ADN22, WSD2018BDN22, WSD2018DN22, WSD2050DN, WSD2054DN22, WSD2068, WSD2075DN

Keywords - WSD1614DN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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