All MOSFET. WSD1614DN Datasheet

 

WSD1614DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD1614DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: DFN1.0X0.6-3L

 WSD1614DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD1614DN Datasheet (PDF)

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 wsd1614dn.pdf

WSD1614DN WSD1614DN

WSD1614DNN-Ch MOSFETDescription Product SummeryThe WSD1614DN uses advanced trench technology BVDSS RDSON ID to provide excellent RDS(ON), low gate charge 20V 230m 1.4A and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery Application protection or in other Switching application. Battery protectionLoad switchFeatures DFN1.0X0.6-3L P

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