2SK2207 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2207
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
tonⓘ - Turn-on Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220F FM20
2SK2207 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2207 Datasheet (PDF)
2sk2207.pdf
2SK2207External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V V 900 V I = 100A, V = 0VDSS (BR) DSS D GSV 30 V I 100 nA V = 30VGSS GSS GSI 3I 100 A V = 900V, V = 0VD A DSS DS GSI 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS
2sk2208.pdf
2SK2208External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V V 900 V I = 100A, V = 0VDSS (BR) DSS D GSV 30 V I 100 nA V = 30VGSS GSS GSI 5I 100 A V = 900V, V = 0VD A DSS DS GSI 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS
2sk2201.pdf
2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance
2sk2200.pdf
2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance
rej03g1002 2sk2202ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2202.pdf
2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous: ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A
Datasheet: 2SK2137 , 2SK2138 , 2SK2139 , 2SK2140 , 2SK2141 , 2SK2157 , 2SK2158 , 2SK2159 , IRFP250 , 2SK2208 , 2SK2234 , 2SK2275 , 2SK2341 , 2SK2409 , 2SK2410 , 2SK2411 , 2SK2412 .
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