2SK2207 - описание и поиск аналогов

 ..1. Size:35K  no
 2sk2207.pdf 

2SK2207 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 3I 100 A V = 900V, V = 0V D A DSS DS GS I 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

 8.1. Size:34K  1
 2sk2208.pdf 

2SK2208 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 5I 100 A V = 900V, V = 0V D A DSS DS GS I 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

 8.2. Size:422K  toshiba
 2sk2201.pdf 

2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

 8.3. Size:412K  toshiba
 2sk2200.pdf 

2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

 8.4. Size:95K  renesas
 rej03g1002 2sk2202ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:81K  renesas
 2sk2202.pdf 

2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A

 8.6. Size:159K  fuji
 2sk2209-01r.pdf