All MOSFET. WSD45P10DN56 Datasheet

 

WSD45P10DN56 Datasheet and Replacement


   Type Designator: WSD45P10DN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 27.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
   Package: DFN5X6-8
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WSD45P10DN56 Datasheet (PDF)

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WSD45P10DN56

WSD45P10DN56P-Ch MOSFETDescription The WSF45P10DN56 uses advanced trenchBVDSS RDS(ON) ID technology and design to provide excellent -100V 62 m -27.5ARDS(ON) with low gate charge. It can be used in a wide variety of applications. Application Portable equipment and batterypowered systemsFeatures Super high dense cell design DFN5X6-8 Pin Configuration Advan

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NVMFS5C430NL | PDNM8TP20V6E | STD4NK60ZT4 | 2SK3600-01S | AP30N30W | 2SK2845 | FDMB3900AN

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