All MOSFET. WSD45P10DN56 Datasheet

 

WSD45P10DN56 Datasheet and Replacement


   Type Designator: WSD45P10DN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
   Package: DFN5X6-8
 

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WSD45P10DN56 Datasheet (PDF)

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WSD45P10DN56

WSD45P10DN56P-Ch MOSFETDescription The WSF45P10DN56 uses advanced trenchBVDSS RDS(ON) ID technology and design to provide excellent -100V 62 m -27.5ARDS(ON) with low gate charge. It can be used in a wide variety of applications. Application Portable equipment and batterypowered systemsFeatures Super high dense cell design DFN5X6-8 Pin Configuration Advan

Datasheet: WSD4050DN , WSD4062DN56 , WSD4066DN , WSD4070DN , WSD4080DN56 , WSD4098DN56 , WSD40N10GDN56 , WSD40P10DN56 , 20N60 , WSD50P10ADN56 , WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , WSD80100DN56 , WSD80120DN56 .

History: NP180N04TUJ | SRT10N160LD

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