WSD45P10DN56 Specs and Replacement
Type Designator: WSD45P10DN56
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: DFN5X6-8
WSD45P10DN56 substitution
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WSD45P10DN56 datasheet
wsd45p10dn56.pdf
WSD45P10DN56 P-Ch MOSFET Description The WSF45P10DN56 uses advanced trench BVDSS RDS(ON) ID technology and design to provide excellent -100V 62 m -27.5A RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application Portable equipment and battery powered systems Features Super high dense cell design DFN5X6-8 Pin Configuration Advan... See More ⇒
Detailed specifications: WSD4050DN, WSD4062DN56, WSD4066DN, WSD4070DN, WSD4080DN56, WSD4098DN56, WSD40N10GDN56, WSD40P10DN56, 20N60, WSD50P10ADN56, WSD50P10DN56, WSD6040DN56, WSD6056DN56, WSD60N10GDN56, WSD75100DN56, WSD80100DN56, WSD80120DN56
Keywords - WSD45P10DN56 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMM36N65C4 | WML25N65EM | SSI4N80A | 2SK1573 | WMN26N60F2
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