All MOSFET. WSD45P10DN56 Datasheet

 

WSD45P10DN56 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD45P10DN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 27.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
   Package: DFN5X6-8

 WSD45P10DN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD45P10DN56 Datasheet (PDF)

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 wsd45p10dn56.pdf

WSD45P10DN56 WSD45P10DN56

WSD45P10DN56P-Ch MOSFETDescription The WSF45P10DN56 uses advanced trenchBVDSS RDS(ON) ID technology and design to provide excellent -100V 62 m -27.5ARDS(ON) with low gate charge. It can be used in a wide variety of applications. Application Portable equipment and batterypowered systemsFeatures Super high dense cell design DFN5X6-8 Pin Configuration Advan

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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