All MOSFET. WSD50P10ADN56 Datasheet

 

WSD50P10ADN56 Datasheet and Replacement


   Type Designator: WSD50P10ADN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
   Package: DFN5X6-8L
 

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WSD50P10ADN56 Datasheet (PDF)

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WSD50P10ADN56

WSD50P10ADN56P-Ch MOSFETGeneral Description Product SummeryThe WSD50P10ADN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 62m -40Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10ADN56 meet the RoHS and High Frequency Point-of-Load

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WSD50P10ADN56

WSD50P10DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD50P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 40m -34Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10DN56 meet the RoHS and Power Management for Industrial

Datasheet: WSD4062DN56 , WSD4066DN , WSD4070DN , WSD4080DN56 , WSD4098DN56 , WSD40N10GDN56 , WSD40P10DN56 , WSD45P10DN56 , IRF540 , WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , WSD80100DN56 , WSD80120DN56 , WSD90P06DN56 .

History: SJMN850R80ZF | AOC2804 | BSN304 | STU60N3LH5-S | IRFH5220 | NCE55P30K | STD3NK60Z

Keywords - WSD50P10ADN56 MOSFET datasheet

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