WSD50P10ADN56 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSD50P10ADN56
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: DFN5X6-8L
WSD50P10ADN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSD50P10ADN56 Datasheet (PDF)
wsd50p10adn56.pdf
WSD50P10ADN56P-Ch MOSFETGeneral Description Product SummeryThe WSD50P10ADN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 62m -40Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10ADN56 meet the RoHS and High Frequency Point-of-Load
wsd50p10dn56.pdf
WSD50P10DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD50P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 40m -34Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10DN56 meet the RoHS and Power Management for Industrial
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100