WSD50P10ADN56 MOSFET Datasheet: P-Ch, 100V, 40A. Full specification with pinout and replacement list

WSD50P10ADN56 Specs and Replacement

Type Designator: WSD50P10ADN56

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm

Package: DFN5X6-8L

WSD50P10ADN56 substitution

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WSD50P10ADN56 datasheet

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WSD50P10ADN56 P-Ch MOSFET General Description Product Summery The WSD50P10ADN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 62m -40A excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10ADN56 meet the RoHS and High Frequency Point-of-Load... See More ⇒

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WSD50P10DN56 P-Ch MOSFET General Description Product Summery The WSD50P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 40m -34A excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10DN56 meet the RoHS and Power Management for Industrial... See More ⇒

Detailed specifications: WSD4062DN56, WSD4066DN, WSD4070DN, WSD4080DN56, WSD4098DN56, WSD40N10GDN56, WSD40P10DN56, WSD45P10DN56, IRF540N, WSD50P10DN56, WSD6040DN56, WSD6056DN56, WSD60N10GDN56, WSD75100DN56, WSD80100DN56, WSD80120DN56, WSD90P06DN56