All MOSFET. WSD50P10DN56 Datasheet

 

WSD50P10DN56 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD50P10DN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 268 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: DFN5X6

 WSD50P10DN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD50P10DN56 Datasheet (PDF)

 ..1. Size:2355K  winsok
 wsd50p10dn56.pdf

WSD50P10DN56 WSD50P10DN56

WSD50P10DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD50P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 40m -34Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10DN56 meet the RoHS and Power Management for Industrial

 6.1. Size:1499K  winsok
 wsd50p10adn56.pdf

WSD50P10DN56 WSD50P10DN56

WSD50P10ADN56P-Ch MOSFETGeneral Description Product SummeryThe WSD50P10ADN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 62m -40Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD50P10ADN56 meet the RoHS and High Frequency Point-of-Load

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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