WSD80100DN56 Datasheet and Replacement
Type Designator: WSD80100DN56
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DFN5X6-8
WSD80100DN56 substitution
WSD80100DN56 Datasheet (PDF)
wsd80100dn56.pdf

WSD80100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 80V 100A6.1mcharge for most of the synchronous buck converter applications . Applications The WSD80100DN56 meet the RoHS and Green DC-DC converter switching fo
wsd80120dn56.pdf

WSD80120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80120DN56 is the highest ID BVDSS RDSON performance trench N-Ch MOSFET with extreme high cell density , which provide 85V 3.7m 120Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD80120DN56 meet the RoHS and Green Product requirement,100% EA
Datasheet: WSD40P10DN56 , WSD45P10DN56 , WSD50P10ADN56 , WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , IRF1404 , WSD80120DN56 , WSD90P06DN56 , WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 .
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