All MOSFET. WSD80100DN56 Datasheet

 

WSD80100DN56 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD80100DN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN5X6-8

 WSD80100DN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD80100DN56 Datasheet (PDF)

 ..1. Size:1374K  winsok
 wsd80100dn56.pdf

WSD80100DN56 WSD80100DN56

WSD80100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 80V 100A6.1mcharge for most of the synchronous buck converter applications . Applications The WSD80100DN56 meet the RoHS and Green DC-DC converter switching fo

 8.1. Size:3424K  winsok
 wsd80120dn56.pdf

WSD80100DN56 WSD80100DN56

WSD80120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80120DN56 is the highest ID BVDSS RDSON performance trench N-Ch MOSFET with extreme high cell density , which provide 85V 3.7m 120Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD80120DN56 meet the RoHS and Green Product requirement,100% EA

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: INJ0011AC1 | IPA50R299CP | NTZS3151PT1G | BRCS080N04ZB | IRFB61N15D | BRCS030N10SHBD

 

 
Back to Top