All MOSFET. WSD80100DN56 Datasheet

 

WSD80100DN56 Datasheet and Replacement


   Type Designator: WSD80100DN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN5X6-8
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WSD80100DN56 Datasheet (PDF)

 ..1. Size:1374K  winsok
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WSD80100DN56

WSD80100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 80V 100A6.1mcharge for most of the synchronous buck converter applications . Applications The WSD80100DN56 meet the RoHS and Green DC-DC converter switching fo

 8.1. Size:3424K  winsok
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WSD80100DN56

WSD80120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD80120DN56 is the highest ID BVDSS RDSON performance trench N-Ch MOSFET with extreme high cell density , which provide 85V 3.7m 120Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD80120DN56 meet the RoHS and Green Product requirement,100% EA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1056 | ME7442D-G | 2SK3474-01 | WST2319 | 2N4222 | IXFN55N50 | AO3403A

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