All MOSFET. WSD90P06DN56 Datasheet

 

WSD90P06DN56 Datasheet and Replacement


   Type Designator: WSD90P06DN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: DFN5X6-8L
 

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WSD90P06DN56 Datasheet (PDF)

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WSD90P06DN56

WSD90P06DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD90P06DN56 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 10.5m -90Agate charge for most of the synchronous buck converter applications . Applications The WSD90P06DN56 meet the RoHS and Green Product requirement , 100%

Datasheet: WSD50P10ADN56 , WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , WSD80100DN56 , WSD80120DN56 , IRF640N , WSE3088 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G .

History: SWI2N60DC | NTHL040N65S3HF | WMM05N100C2 | IRF1503SPBF | SI3407DV-T1 | IRFR9120 | HAT2029RJ

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