WSD90P06DN56 Specs and Replacement
Type Designator: WSD90P06DN56
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: DFN5X6-8L
WSD90P06DN56 substitution
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WSD90P06DN56 datasheet
wsd90p06dn56.pdf
WSD90P06DN56 P-Ch MOSFET General Description Product Summery The WSD90P06DN56 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 10.5m -90A gate charge for most of the synchronous buck converter applications . Applications The WSD90P06DN56 meet the RoHS and Green Product requirement , 100% ... See More ⇒
Detailed specifications: WSD50P10ADN56, WSD50P10DN56, WSD6040DN56, WSD6056DN56, WSD60N10GDN56, WSD75100DN56, WSD80100DN56, WSD80120DN56, IRFB4110, WSE3088, WSE3099, WSE9968, WSE9968A, WSF07N10, WSF07N20, WSF09N20, WSF09N20G
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WSD3042DN56 | WSD3028DN | WSC60N03
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