All MOSFET. WSD90P06DN56 Datasheet

 

WSD90P06DN56 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD90P06DN56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: DFN5X6-8L

 WSD90P06DN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD90P06DN56 Datasheet (PDF)

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 wsd90p06dn56.pdf

WSD90P06DN56 WSD90P06DN56

WSD90P06DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD90P06DN56 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 10.5m -90Agate charge for most of the synchronous buck converter applications . Applications The WSD90P06DN56 meet the RoHS and Green Product requirement , 100%

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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