All MOSFET. WSE3099 Datasheet

 

WSE3099 Datasheet and Replacement


   Type Designator: WSE3099
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.6 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT89
 

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WSE3099 Datasheet (PDF)

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WSE3099

WSE3099 P-Ch MOSFETGeneral Description Product SummeryThe WSP3099 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 53m -5.0Afor most of the synchronous buck converter applications . Applications The WSP3099 meet the RoHS and Green Product requirement with full function reli

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WSE3099

WSE3088 N-Ch MOSFETGeneral Description Product SummeryThe WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7Afor most of the synchronous buck converter applications .Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

Datasheet: WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , WSD80100DN56 , WSD80120DN56 , WSD90P06DN56 , WSE3088 , 10N60 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G , WSF10N40 , WSF12N10 .

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