All MOSFET. WSF07N10 Datasheet

 

WSF07N10 Datasheet and Replacement


   Type Designator: WSF07N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 170 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252
 

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WSF07N10 Datasheet (PDF)

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WSF07N10

WSF07N10 N-Ch MOSFETProduct SummeryGeneral Description The WSF07N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 195m 7Adensity , which provide excellent RDSON and 100Vgate charge for most of the synchronous buck converter applications . Applications The WSF07N10 meet the RoHS and Green High Frequency Point-of-Load Synchronou

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WSF07N10

WSF07N20 N-Ch MOSFETGeneral Description Product SummeryThe WSF07N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 200V 0.49 7Aof the synchronous buck converter applications . Applications The WSF07N20 meet the RoHS and Green Product requirement , 100% EAS guaranteed with

Datasheet: WSD75100DN56 , WSD80100DN56 , WSD80120DN56 , WSD90P06DN56 , WSE3088 , WSE3099 , WSE9968 , WSE9968A , P55NF06 , WSF07N20 , WSF09N20 , WSF09N20G , WSF10N40 , WSF12N10 , WSF15N10 , WSF15N10A , WSF15N10G .

History: MSB22A04Q8 | WSP4805 | NTA4001NT1 | TPC8025 | GSM3481S | FKI07076 | STP200N6F3

Keywords - WSF07N10 MOSFET datasheet

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