WSF12N10 PDF and Equivalents Search

 

WSF12N10 Specs and Replacement

Type Designator: WSF12N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 170 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO252

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WSF12N10 datasheet

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 wsf12n10.pdf pdf_icon

WSF12N10

WSF12N10 N-Ch MOSFET Product Summery General Description The WSF12N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 175m 12A density , which provide excellent RDSON and 100V gate charge for most of the synchronous buck converter applications . Applications The WSF12N10 meet the RoHS and Green High Frequency Point-of-Load Synchrono... See More ⇒

Detailed specifications: WSE3099, WSE9968, WSE9968A, WSF07N10, WSF07N20, WSF09N20, WSF09N20G, WSF10N40, P55NF06, WSF15N10, WSF15N10A, WSF15N10G, WSF15P10, WSF18N15, WSF20N06, WSF20N20, WSF20N20G

Keywords - WSF12N10 MOSFET specs

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