All MOSFET. WSF12N10 Datasheet

 

WSF12N10 Datasheet and Replacement


   Type Designator: WSF12N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 170 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO252
 

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WSF12N10 Datasheet (PDF)

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WSF12N10

WSF12N10 N-Ch MOSFETProduct SummeryGeneral Description The WSF12N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 175m 12Adensity , which provide excellent RDSON and 100Vgate charge for most of the synchronous buck converter applications . Applications The WSF12N10 meet the RoHS and Green High Frequency Point-of-Load Synchrono

Datasheet: WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G , WSF10N40 , IRFB4115 , WSF15N10 , WSF15N10A , WSF15N10G , WSF15P10 , WSF18N15 , WSF20N06 , WSF20N20 , WSF20N20G .

History: MTB06N03H8

Keywords - WSF12N10 MOSFET datasheet

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