All MOSFET. WSF18N15 Datasheet

 

WSF18N15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSF18N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25.1 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO252

 WSF18N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSF18N15 Datasheet (PDF)

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 wsf18n15.pdf

WSF18N15 WSF18N15

WSF18N15 N-Ch MOSFETGeneral Description Product SummeryThe WSF18N15 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 150V 95m 17Aof the synchronous buck converter applications . Applications The WSF18N15 meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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