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WSF18N15 Specs and Replacement

Type Designator: WSF18N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO252

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WSF18N15 datasheet

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WSF18N15

WSF18N15 N-Ch MOSFET General Description Product Summery The WSF18N15 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 150V 95m 17A of the synchronous buck converter applications . Applications The WSF18N15 meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒

Detailed specifications: WSF09N20, WSF09N20G, WSF10N40, WSF12N10, WSF15N10, WSF15N10A, WSF15N10G, WSF15P10, IRF9540, WSF20N06, WSF20N20, WSF20N20G, WSF20P03, WSF28N06, WSF30100, WSF30100D, WSF3012

Keywords - WSF18N15 MOSFET specs

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