All MOSFET. WSF18N15 Datasheet

 

WSF18N15 Datasheet and Replacement


   Type Designator: WSF18N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO252
 

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WSF18N15 Datasheet (PDF)

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WSF18N15

WSF18N15 N-Ch MOSFETGeneral Description Product SummeryThe WSF18N15 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 150V 95m 17Aof the synchronous buck converter applications . Applications The WSF18N15 meet the RoHS and Green Product requirement , 100% EAS guaranteed

Datasheet: WSF09N20 , WSF09N20G , WSF10N40 , WSF12N10 , WSF15N10 , WSF15N10A , WSF15N10G , WSF15P10 , IRF9540 , WSF20N06 , WSF20N20 , WSF20N20G , WSF20P03 , WSF28N06 , WSF30100 , WSF30100D , WSF3012 .

History: ME50N06A-G | APT56M50B2

Keywords - WSF18N15 MOSFET datasheet

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