WSF3410 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF3410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 170 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO252
WSF3410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF3410 Datasheet (PDF)
wsf3410.pdf
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WSF3410N-Ch MOSFETProduct SummeryGeneral Description The WSF3410 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 90m 15Afor most of the synchronous buck converter applications .Applications The WSF3410 meet the RoHS and Green Product High Frequency Point-of-Load Synchrono
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SWD340R10VT
History: SWD340R10VT
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