All MOSFET. WSF3410 Datasheet

 

WSF3410 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSF3410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 170 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252

 WSF3410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSF3410 Datasheet (PDF)

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wsf3410.pdf

WSF3410 WSF3410

WSF3410N-Ch MOSFETProduct SummeryGeneral Description The WSF3410 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 90m 15Afor most of the synchronous buck converter applications .Applications The WSF3410 meet the RoHS and Green Product High Frequency Point-of-Load Synchrono

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