All MOSFET. WSF38P10 Datasheet

 

WSF38P10 Datasheet and Replacement


   Type Designator: WSF38P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO252
 

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WSF38P10 Datasheet (PDF)

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WSF38P10

WSF38P10P-Ch MOSFETGeneral Description Product SummeryThe WSF38P10 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 78m -30Agate charge for most of the synchronous buck converter applications . Applications The WSF38P10 meet the RoHS and Green High Frequency Point-of-Load Synchronou

Datasheet: WSF3040 , WSF3055 , WSF3085 , WSF3085A , WSF3087 , WSF30P06 , WSF3410 , WSF35P06 , IRLZ44N , WSF4012 , WSF4022 , WSF4042 , WSF4060 , WSF40N06 , WSF40N10 , WSF40N10A , WSF40P03 .

History: IRFR3711ZC | STB270N4F3

Keywords - WSF38P10 MOSFET datasheet

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