All MOSFET. WSF45P06 Datasheet

 

WSF45P06 Datasheet and Replacement


   Type Designator: WSF45P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO252
 

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WSF45P06 Datasheet (PDF)

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WSF45P06

WSF45P06P-Ch MOSFETGeneral Description Product SummeryThe WSF45P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge -60V 40m -45Afor most of the synchronous buck converter applications . Applications The WSF45P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed

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WSF45P06

WSF45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSF45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 44m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF45P10 meet the RoHS and Green Product requirement with ful

Datasheet: WSF4042 , WSF4060 , WSF40N06 , WSF40N10 , WSF40N10A , WSF40P03 , WSF40P04 , WSF40P06 , IRFP250 , WSF45P10 , WSF50N10 , WSF50N10G , WSF50P04 , WSF50P10 , WSF60100 , WSF6012 , WSF60N06 .

History: ME50P06-G

Keywords - WSF45P06 MOSFET datasheet

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