All MOSFET. WSF45P06 Datasheet

 

WSF45P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSF45P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.1 nC
   trⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO252

 WSF45P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSF45P06 Datasheet (PDF)

 ..1. Size:858K  winsok
 wsf45p06.pdf

WSF45P06 WSF45P06

WSF45P06P-Ch MOSFETGeneral Description Product SummeryThe WSF45P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge -60V 40m -45Afor most of the synchronous buck converter applications . Applications The WSF45P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed

 8.1. Size:717K  winsok
 wsf45p10.pdf

WSF45P06 WSF45P06

WSF45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSF45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 44m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF45P10 meet the RoHS and Green Product requirement with ful

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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