WSF45P10 MOSFET Datasheet: P-Ch, 100V, 40A. Full specification with pinout and replacement list

WSF45P10 Specs and Replacement

Type Designator: WSF45P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO252

WSF45P10 substitution

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WSF45P10 datasheet

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WSF45P10 P-Ch MOSFET General Description Product Summery The WSF45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 44m -40A gate charge for most of the small power switching and load switch applications. Applications The WSF45P10 meet the RoHS and Green Product requirement with ful... See More ⇒

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WSF45P06 P-Ch MOSFET General Description Product Summery The WSF45P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge -60V 40m -45A for most of the synchronous buck converter applications . Applications The WSF45P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed... See More ⇒

Detailed specifications: WSF4060, WSF40N06, WSF40N10, WSF40N10A, WSF40P03, WSF40P04, WSF40P06, WSF45P06, IRF1407, WSF50N10, WSF50N10G, WSF50P04, WSF50P10, WSF60100, WSF6012, WSF60N06, WSF70N10