WSF45P10 Datasheet and Replacement
Type Designator: WSF45P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO252
WSF45P10 substitution
WSF45P10 Datasheet (PDF)
wsf45p10.pdf

WSF45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSF45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 44m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF45P10 meet the RoHS and Green Product requirement with ful
wsf45p06.pdf

WSF45P06P-Ch MOSFETGeneral Description Product SummeryThe WSF45P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge -60V 40m -45Afor most of the synchronous buck converter applications . Applications The WSF45P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed
Datasheet: WSF4060 , WSF40N06 , WSF40N10 , WSF40N10A , WSF40P03 , WSF40P04 , WSF40P06 , WSF45P06 , P0903BDG , WSF50N10 , WSF50N10G , WSF50P04 , WSF50P10 , WSF60100 , WSF6012 , WSF60N06 , WSF70N10 .
History: IPI80P03P4-05 | SSF5NS70UF | SSF6014 | SI6466ADQ | KMB4D8DN55Q | WMS032N04LG2 | IRFBA1405PPBF
Keywords - WSF45P10 MOSFET datasheet
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History: IPI80P03P4-05 | SSF5NS70UF | SSF6014 | SI6466ADQ | KMB4D8DN55Q | WMS032N04LG2 | IRFBA1405PPBF



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